1. Home
  2. Publication
  3. Depth profile reconstructions of electronic transport properties in H+ MeV-energy ion-implanted n-Si wafers using photocarrier radiometry

Depth profile reconstructions of electronic transport properties in H+ MeV-energy ion-implanted n-Si wafers using photocarrier radiometry

R. Tai, C-H Wang, J-P Hu and A.Mandelis - 2014

Permalink to Publication

https://cadipt.mie.utoronto.ca/publications/depth-profile-reconstructions-of-electronic-transport-properties-in-h-mev-energy-ion-implanted-n-si-wafers-using-photocarrier-radiometry/

Citation

R. Tai, C-H Wang, J-P Hu and A.Mandelis, "Depth profile reconstructions of electronic transport properties in H+ MeV-energy ion-implanted n-Si wafers using photocarrier radiometry", J. Appl. Phys. 116 (3) 033706 (8 pages) (Jul 21, 2014)

PDF

View and Download