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Laser-based measurements of temperature dependence of carrier mobility and lifetime in Si wafers using photocarrier radiometry

J. Batista, A. Mandelis, and D. Shaughnessy - 2005

Permalink to Publication

https://cadipt.mie.utoronto.ca/publications/laser-based-measurements-of-temperature-dependence-of-carrier-mobility-and-lifetime-in-si-wafers-using-photocarrier-radiometry/

Citation

J. Batista, A. Mandelis, and D. Shaughnessy, "Laser-based measurements of temperature dependence of carrier mobility and lifetime in Si wafers using photocarrier radiometry", Proc. 13th Int. Conf. Photoacoustic & Photothermal Phenomena, July 5 – 8, 2004, J. Physique IV France, 125, 443 - 445 (2005).

Laser-based measurements of temperature dependence of carrier mobility and lifetime in Si wafers using photocarrier radiometry

J. Batista, A. Mandelis, and D. Shaughnessy - 2005

Permalink to Publication

https://cadipt.mie.utoronto.ca/publications/laser-based-measurements-of-temperature-dependence-of-carrier-mobility-and-lifetime-in-si-wafers-using-photocarrier-radiometry/

Citation

J. Batista, A. Mandelis, and D. Shaughnessy, "Laser-based measurements of temperature dependence of carrier mobility and lifetime in Si wafers using photocarrier radiometry", Proc. 13th Int. Conf. Photoacoustic & Photothermal Phenomena, July 5 – 8, 2004, J. Physique IV France, 125, 443 - 445 (2005).