“An optoelectronic notch (‘dip’) phenomenon in the heterodyne photocarrier radiometry frequency response of Si wafers: a route to quantitative trap-state dynamic processes in semiconductors

https://cadipt.mie.utoronto.ca/publications/an-optoelectronic-notch-dip-phenomenon-in-the-heterodyne-photocarrier-radiometry-frequency-response-of-si-wafers-a-route-to-quantitative-trap-state-dynamic-processes-in-s/

Y. Song, A. Mandelis, A. Melnikov and Q. Sun, “An optoelectronic notch (‘dip’) phenomenon in the heterodyne photocarrier radiometry frequency response of Si wafers: a route to quantitative trap-state dynamic processes in semiconductors”, IOP Semiconductor Sci. Technol. 36 (11), 115024 (14 pages) (2020). https://doi.org/10.1088/1361-6641/abb8fc