Broadening effects and ergodicity in deep level photo-thermal spectroscopy of defect states in semi-insulating GaAs: a combined temperature-, pulse-rate- and time-domain study of defect state kinetics

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https://cadipt.mie.utoronto.ca/publications/broadening-effects-and-ergodicity-in-deep-level-photo-thermal-spectroscopy-of-defect-states-in-semi-insulating-gaas-a-combined-temperature-pulse-rate-and-time-domain-study-of-defect-state-kinetics/

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Andreas Mandelis and Jun Xia, "Broadening effects and ergodicity in deep level photo-thermal spectroscopy of defect states in semi-insulating GaAs: a combined temperature-, pulse-rate- and time-domain study of defect state kinetics", Proc. 15 Int. Conf. Photoacoustic Photothermal Phenomena (15 ICPPP), July 19 – 23, 2009, Leuven, Belgium, J. Phys. Conf. Ser. 214 012001 (1 – 7) (2010).

Broadening Effects and Ergodicity in Deep Level Photo-Thermal Spectroscopy of Defect States in Semi-Insulating GaAs: A Combined Temperature-, Pulse-Rate- and Time-Domain Study of Defect State Kinetics

Permalink to Publication

https://cadipt.mie.utoronto.ca/publications/broadening-effects-and-ergodicity-in-deep-level-photo-thermal-spectroscopy-of-defect-states-in-semi-insulating-gaas-a-combined-temperature-pulse-rate-and-time-domain-study-of-defect-state-kinetics/

Citation

J. Xia and A. Mandelis, "Broadening Effects and Ergodicity in Deep Level Photo-Thermal Spectroscopy of Defect States in Semi-Insulating GaAs: A Combined Temperature-, Pulse-Rate- and Time-Domain Study of Defect State Kinetics", J. Appl. Phys. 105, 103712 (1 – 15), May 30, 2009.

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