Depth profiling for electronic transport properties in H+ implanted n-type silicon with MeV energy

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https://cadipt.mie.utoronto.ca/publications/depth-profiling-for-electronic-transport-properties-in-h-implanted-n-type-silicon-with-mev-energy/

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R. Tai, C-H. Wang, J-P Hu, and A. Mandelis, "Depth profiling for electronic transport properties in H+ implanted n-type silicon with MeV energy", Int. J. Thermophys. 36 (5-6), 967-972 (May-June 2015) DOI: 10.1007/s10765-014-1716-z

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