H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry

https://cadipt.mie.utoronto.ca/publications/h-ion-implantation-energy-dependence-of-electronic-transport-properties-in-the-mev-range-in-n-type-silicon-wafers-using-frequency-domain-photocarrier-radiometry-3/

C.-H. Wang , A. Mandelis, J. Tolev, B. Burchard and J. Meijer, "H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry", J. Appl. Phys., 101, 123109 (1-11) (2007).