1. Home
  2. Publication
  3. Non-Contacting Laser Photocarrier Radiometric Depth Profilometry of Harmonically Modulated Band-Bending in the Space Charge Layer at Doped SiO2 – Si Interfaces

Non-Contacting Laser Photocarrier Radiometric Depth Profilometry of Harmonically Modulated Band-Bending in the Space Charge Layer at Doped SiO2 – Si Interfaces

A. Mandelis, J. Batista, J. Gibkes, M. Pawlak and J. Pelzl - 2005

Permalink to Publication

https://cadipt.mie.utoronto.ca/publications/non-contacting-laser-photocarrier-radiometric-depth-profilometry-of-harmonically-modulated-band-bending-in-the-space-charge-layer-at-doped-sio2-si-interfaces-3/

Citation

A. Mandelis, J. Batista, J. Gibkes, M. Pawlak and J. Pelzl, "Non-Contacting Laser Photocarrier Radiometric Depth Profilometry of Harmonically Modulated Band-Bending in the Space Charge Layer at Doped SiO2 – Si Interfaces", J. Appl. Phys., 97, 083507-1 - 11 (April 2005).

PDF

View and Download