Ion implantation dose high-resolution monitoring in Si wafers using laser infrared photothermal radiometry with lock-in common-mode-rejection demodulation

Permalink to Publication

https://cadipt.mie.utoronto.ca/publications/ion-implantation-dose-high-resolution-monitoring-in-si-wafers-using-laser-infrared-photothermal-radiometry-with-lock-in-common-mode-rejection-demodulation/

Citation

A. Mandelis and F. Rabago, "Ion implantation dose high-resolution monitoring in Si wafers using laser infrared photothermal radiometry with lock-in common-mode-rejection demodulation", Solid-State Electron. 49, 769 – 773 (2005).

PDF

View and Download