Publications: Carrier-Density Diffusion-Waves in Semiconductors and Metrology using Carrier and Thermal Waves

Carrier-Density Diffusion-Waves in Semiconductors and Metrology using Carrier and Thermal Waves

  1. Camera-based High Frequency Heterodyne Lock-in Carrierographic (frequency-domain photoluminescence) Imaging of Crystalline Silicon Wafers
    Q. M. Sun, A. Melnikov and A. Mandelis, "Camera-based High Frequency Heterodyne Lock-in Carrierographic (frequency-domain photoluminescence) Imaging of Crystalline Silicon Wafers", Phys. Stat. Sol. A 213 (2), 405-411 (2016) / DOI 10.1002/pssa.201532033 - PDF
  2. Trap State Effects in PbS Colloidal Quantum Dot Exciton Kinetics Using Photo-Carrier Radiometry Intensity and Temperature Measurements
    J. Wang, A. Mandelis, A. Melnikov and Q. Sun, “Trap State Effects in PbS Colloidal Quantum Dot Exciton Kinetics Using Photo-Carrier Radiometry Intensity and Temperature Measurements”, Int. J. Thermophys. 37 (60) (9 pages) (2016) DOI: 10.1007/s10765-016-2065-x - PDF
  3. Camera-based Lock-in and Heterodyne Carrierographic Photoluminescence Imaging of Crystalline Silicon Wafers
    Q. M. Sun, A. Melnikov and A. Mandelis, "Camera-based Lock-in and Heterodyne Carrierographic Photoluminescence Imaging of Crystalline Silicon Wafers", Int. J. Thermophys. 36 (5-6), 1274-1280 (May-June 2015) DOI: 10.1007/s10765-014-1599-z - PDF
  4. Depth profiling for electronic transport properties in H+ implanted n-type silicon with MeV energy
    R. Tai, C-H. Wang, J-P Hu, and A. Mandelis, "Depth profiling for electronic transport properties in H+ implanted n-type silicon with MeV energy", Int. J. Thermophys. 36 (5-6), 967-972 (May-June 2015) DOI: 10.1007/s10765-014-1716-z - PDF
  5. Variational photocarrier radiometry reconstruction of exciton lifetime spectra for a coupled PbS colloidal quantum dot thin film under combined ac and dc laser excitation
    J. Wang, A. Mandelis, and A. Melnikov, "Variational photocarrier radiometry reconstruction of exciton lifetime spectra for a coupled PbS colloidal quantum dot thin film under combined ac and dc laser excitation", Int. J. Thermophys. 36 (5-6), 1358-1365 (May-June 2015) DOI: 10.1007/s10765-014-1872-9 - PDF
  6. Depth profile reconstructions of electronic transport properties in H+ MeV-energy ion-implanted n-Si wafers using photocarrier radiometry
    R. Tai, C-H Wang, J-P Hu and A.Mandelis, "Depth profile reconstructions of electronic transport properties in H+ MeV-energy ion-implanted n-Si wafers using photocarrier radiometry", J. Appl. Phys. 116 (3) 033706 (8 pages) (Jul 21, 2014) - PDF
  7. Variational reconstruction of exciton multipath deexcitation lifetime spectra in coupled PbS colloidal quantum dots
    J. Wang and A. Mandelis, "Variational reconstruction of exciton multipath deexcitation lifetime spectra in coupled PbS colloidal quantum dots", J. Phys. Chem. C 118 (33), pp 19484–19491 (July 28, 2014), DOI: 10.1021/jp506194y. - PDF
  8. Exciton lifetime broadening and distribution profiles of PbS colloidal quantum dot thin films using frequency- and temperature-scanned photocarrier radiometry
    J. Wang, A. Mandelis, A. Melnikov, S. Hoogland, and E. H. Sargent, "Exciton lifetime broadening and distribution profiles of PbS colloidal quantum dot thin films using frequency- and temperature-scanned photocarrier radiometry", J. Phys. Chem. C 117, 23333−23348 (2013). http://dx.doi.org/10.1021/jp407228k (Includes Supplement [1]: "Variational method for Fredholm integral equation solution"; and Supplement [2]: "Supporting information"). - PDF
  9. Interface state effects in hydrogenated amorphous-crystalline silicon heterostructures using UV laser photocarrier radiometry
    A. Melnikov, A. Mandelis, B. Halliop, and N.P. Kherani, "Interface state effects in hydrogenated amorphous-crystalline silicon heterostructures using UV laser photocarrier radiometry", J.Appl. Phys. 114, 244506 (1-10) (2013) http://dx.doi.org/10.1063/1.4854595 - PDF
  10. Direct Search Deep-Level Photo-Thermal Spectroscopy: An enhanced reliability method for overlapped semiconductor defect-state characterization
    J. Xia and A. Mandelis, "Direct Search Deep-Level Photo-Thermal Spectroscopy: An enhanced reliability method for overlapped semiconductor defect-state characterization", Appl. Phys. Lett. 96, 262112 (1 – 3), (2010). - PDF
  11. Quantitative lock-in carrierographic lifetime imaging of silicon wafers
    Q.-M. Sun, A. Melnikov and A. Mandelis, "Quantitative lock-in carrierographic lifetime imaging of silicon wafers" Appl. Phys. Lett. 101, 242107 (4 pages) (2012). Article chosen first among 5 "Research Highlights" and among the highest 20 downloads of this issue of Applied Physics Letters. - PDF
  12. Broadening Effects and Ergodicity in Deep Level Photo-Thermal Spectroscopy of Defect States in Semi-Insulating GaAs: A Combined Temperature-, Pulse-Rate- and Time-Domain Study of Defect State Kinetics
    J. Xia and A. Mandelis, "Broadening Effects and Ergodicity in Deep Level Photo-Thermal Spectroscopy of Defect States in Semi-Insulating GaAs: A Combined Temperature-, Pulse-Rate- and Time-Domain Study of Defect State Kinetics", J. Appl. Phys. 105, 103712 (1 – 15), May 30, 2009. - PDF
  13. Photocarrier radiometry study of radiative defect states in semi-insulating GaAs wafer
    J. Xia and A. Mandelis, "Photocarrier radiometry study of radiative defect states in semi-insulating GaAs wafer", Semicond. Sci. Technol. 24, 125002 (1 – 7), 2009. - PDF
  14. Deep-Level Photo-Thermal Spectroscopy: Physical Principles and Applications to Semi-Insulating GaAs Band-gap Multiple Trap States
    A. Mandelis and J. Xia, "Deep-Level Photo-Thermal Spectroscopy: Physical Principles and Applications to Semi-Insulating GaAs Band-gap Multiple Trap States", J. Appl. Phys. 103, 043704 (1 – 17) (2008). Paper selected for inclusion in Virtual Journal of Ultrafast Science (http://www.vjultrafast.org), 7 (3) 103, 043704 (1 - 17), March 1, 2008. - PDF
  15. H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry
    C.-H. Wang , A. Mandelis, J. Tolev, B. Burchard and J. Meijer, "H+ ion-implantation energy dependence of electronic transport properties in the MeV range in n-type silicon wafers using frequency-domain photocarrier radiometry", J. Appl. Phys., 101, 123109 (1-11) (2007). - PDF
  16. Noncontact deep level photothermal spectroscopy: Technique and application to semi-insulating GaAs Wafers
    J. Xia and A. Mandelis, "Noncontact deep level photothermal spectroscopy: Technique and application to semi-insulating GaAs Wafers", Appl. Phys. Lett. 90, 062119 (1-3)(2007). - PDF
  17. Electronic Defect and Contamination Monitoring in Si Wafers Using Spectrally Integrated Room-Temperature Photo-Carrier Radiometry
    D. Shaughnessy and A. Mandelis, "Electronic Defect and Contamination Monitoring in Si Wafers Using Spectrally Integrated Room-Temperature Photo-Carrier Radiometry", J. Electrochem. Soc. 153 (4) G283 – G290 (2006). - PDF
  18. Two-beam cross-modulation photocarrier radiometry. Principles and contrast amplification in semiconductor subsurface imaging
    D. Shaughnessy, A. Mandelis, J. Batista, J. Tolev and B. Li, "Two-beam cross-modulation photocarrier radiometry. Principles and contrast amplification in semiconductor subsurface imaging", Semicond. Sci. Technol. 320-334 21 (2006). - PDF
  19. Ion implantation dose high-resolution monitoring in Si wafers using laser infrared photothermal radiometry with lock-in common-mode-rejection demodulation
    A. Mandelis and F. Rabago, "Ion implantation dose high-resolution monitoring in Si wafers using laser infrared photothermal radiometry with lock-in common-mode-rejection demodulation", Solid-State Electron. 49, 769 – 773 (2005). - PDF
  20. Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers
    B. Li, D. Shaughnessy, and A. Mandelis, "Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers", J. Appl. Phys. 97, 023701, 1-7 (2005). - PDF
  21. Non-Contacting Laser Photocarrier Radiometric Depth Profilometry of Harmonically Modulated Band-Bending in the Space Charge Layer at Doped SiO2 – Si Interfaces
    A. Mandelis, J. Batista, J. Gibkes, M. Pawlak and J. Pelzl, "Non-Contacting Laser Photocarrier Radiometric Depth Profilometry of Harmonically Modulated Band-Bending in the Space Charge Layer at Doped SiO2 – Si Interfaces", J. Appl. Phys., 97, 083507-1 - 11 (April 2005). - PDF
  22. Time-domain and lock-in rate-window photocarrier radiometric measurements of recombination processes in silicon
    A. Mandelis, M. Pawlak, C. Wang, I. Delagadillo-Holfort and J. Pelzl, "Time-domain and lock-in rate-window photocarrier radiometric measurements of recombination processes in silicon", J. Appl. Phys. 98, 123518: 1 - 13 (2005). - PDF
  23. Accuracy of photo-carrier radiometric measurements of electronic transport properties of ion-implanted silicon wafers
    B. Li, D. Shaughnessy, A. Mandelis, J. Batista and J. Garcia, "Accuracy of photo-carrier radiometric measurements of electronic transport properties of ion-implanted silicon wafers", J. Appl. Phys. 96 (1), 186 - 196 (1 July 2004). - PDF
  24. Carrier-Density-Wave Transport and Local Internal Electric Field Measurements in Biased Metal-Oxide-Semiconductor n-Si Devices using Contactless Laser Photo-Carrier Radiometry
    A. Mandelis, M. Pawlak and D. Shaughnessy, "Carrier-Density-Wave Transport and Local Internal Electric Field Measurements in Biased Metal-Oxide-Semiconductor n-Si Devices using Contactless Laser Photo-Carrier Radiometry", Semicond. Sci. Technol. 19, 1240 – 1249 (2004). - PDF
  25. Ion Implant Dose Dependence of Photocarrier Radiometry at Multiple Excitation Wavelengths
    D. Shaughnessy, B. Li, A. Mandelis and J. Batista, "Ion Implant Dose Dependence of Photocarrier Radiometry at Multiple Excitation Wavelengths", Appl. Phys. Lett. 84 (25), 5219-5221 (June 2004). - PDF
  26. Theory of Space Charge Layer Dynamics at Oxide-Semiconductor Interfaces under Optical Modulation and Detection by Laser Photocarrier Radiometry
    A. Mandelis, "Theory of Space Charge Layer Dynamics at Oxide-Semiconductor Interfaces under Optical Modulation and Detection by Laser Photocarrier Radiometry", J. Appl. Phys., 97, 083508-1 - 11 (April, 2005). - PDF
  27. Three-Layer Photo-Carrier Radiometry Model of Ion-Implanted Silicon Wafers
    B. Li, D. Shaughnessy, A. Mandelis, J. Batista and J. Garcia, "Three-Layer Photo-Carrier Radiometry Model of Ion-Implanted Silicon Wafers", J. Appl. Phys. 95 (12), 7832 - 7840 (15 June 2004). - PDF
  28. Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspects
    D. Shaughnessy and A. Mandelis, "Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers I: Theoretical aspects", J. Appl. Phys. 93, Number 9, 5236-5243 (1 May 2003). - PDF
  29. Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects
    D. Shaughnessy and A. Mandelis, "Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects", J. Appl. Phys. 93, Number 9, 5244-5250 (1 May 2003). - PDF
  30. Common-mode-rejection demodulation lock-in technique for high-resolution characterization of ion implantation in silicon wafers
    F. Rabago and A. Mandelis, "Common-mode-rejection demodulation lock-in technique for high-resolution characterization of ion implantation in silicon wafers", Rev. Sci. Instrum. 74 (1), 624 - 627 (January 2003). - PDF
  31. Deep subsurface electronic defect image contrast and resolution amplification in Si wafers using infrared photocarrier radiometry
    J. Batista, A. Mandelis, D. Shaughnessy and B. Li, "Deep subsurface electronic defect image contrast and resolution amplification in Si wafers using infrared photocarrier radiometry", Appl. Phys. Lett. 85 (10), 1713 - 1715 (6 Sept. 2004). - PDF
  32. Infrared photo-carrier radiometry of semiconductors: Physical principles, quantitative depth profilometry and scanning imaging of deep sub-surface electronic defects
    A. Mandelis, J. Batista and D. Shaughnessy, "Infrared photo-carrier radiometry of semiconductors: Physical principles, quantitative depth profilometry and scanning imaging of deep sub-surface electronic defects", Phys. Rev. B 67, 205208-1-18 (May 2003). - PDF
  33. Infrared photothermal radiometry of deep subsurface defects in semiconductor materials
    M. E. Rodriguez, J. A. Garcia and A. Mandelis, "Infrared photothermal radiometry of deep subsurface defects in semiconductor materials", Rev. Sci. Instrum. 74 (1), 839 - 841 (January 2003). - PDF
  34. Photo-Carrier Radiometry of Semiconductors: A Novel Powerful Optoelectronic Diffusion-Wave Technique for Silicon Process Non-Destructive Evaluation
    A. Mandelis, "Photo-Carrier Radiometry of Semiconductors: A Novel Powerful Optoelectronic Diffusion-Wave Technique for Silicon Process Non-Destructive Evaluation", NDT&E International 39 (3), 244 – 252 (April 2006) - PDF
  35. Spectroscopic photothermal radiometry as a deep subsurface depth profilometric technique in semiconductors
    D. Shaughnessy and A. Mandelis, "Spectroscopic photothermal radiometry as a deep subsurface depth profilometric technique in semiconductors", Rev. Sci. Instrum. 74 (1), 529 – 532 (January 2003). - PDF
  36. Temperature dependence of carrier mobility in FZ-Si wafers measured by infrared photo-carrier radiometry
    J. Batista, A. Mandelis and D. Shaughnessy, "Temperature dependence of carrier mobility in FZ-Si wafers measured by infrared photo-carrier radiometry", Appl. Phys. Lett. 82, 4077-4079 (9 June 2003). - PDF
  37. Laser Infrared Photothermal Radiometric and ELYMAT Characterization of p-Si Wafers Annealed in the Presence of an External Electric Field
    A. Mandelis, M. E. Rodriguez, Y. Raskin and V. Gorodokin, "Laser Infrared Photothermal Radiometric and ELYMAT Characterization of p-Si Wafers Annealed in the Presence of an External Electric Field", Phys. Stat. Sol. (a) 185 (2), 471-478 (2001). - PDF
  38. Laser infrared Photothermal Radiometry of Electronic Solids: Principles and Applications to Industrial Semiconductor Si Wafers
    A. Mandelis and Y. Riopel, "Laser infrared Photothermal Radiometry of Electronic Solids: Principles and Applications to Industrial Semiconductor Si Wafers", J. Vac. Sci. Technol. A 18 (2), 705-708, Mar/Apr 2000. - PDF
  39. Microelectronic Circuit Characterization via Photothermal Radiometry of Scribeline Recombination Lifetime
    M. E. Rodriguez, A. Mandelis, G. Pan, J. A. Garcia and Y. Riopel, "Microelectronic Circuit Characterization via Photothermal Radiometry of Scribeline Recombination Lifetime", Solid-State Electron. 44, 703-711 (2000). - PDF
  40. Minority Carrier Lifetime and Concentration Measurements on p-Si Wafers by Infrared Photothermal Radiometry and Microwave Photoconductance Decay
    M. E. Rodriguez, A. Mandelis, G. Pan, J. A. Garcia, V. Gorodokin and Y. Raskin, "Minority Carrier Lifetime and Concentration Measurements on p-Si Wafers by Infrared Photothermal Radiometry and Microwave Photoconductance Decay", J. Appl. Phys. 87 (11) 8113 - 8121 (1 June 2000). - PDF
  41. Computational Aspects of Laser Radiometric Multiparameter Fit for Carrier Transport Property Measurements in Si Wafers
    M. E. Rodriguez, A. Mandelis, G. Pan, L. Nicolaides, J. A. Garcia and Y. Riopel, "Computational Aspects of Laser Radiometric Multiparameter Fit for Carrier Transport Property Measurements in Si Wafers", J. Electrochem. Soc. 147 (2), 687-698 (2000). - PDF
  42. Evidence of Surface Acceptor State in Undoped Semi-Insulating GaAs by Photothermal Radiometric Deep Level Transient Spectroscopy
    A. Mandelis and R. A. Budiman, "Evidence of Surface Acceptor State in Undoped Semi-Insulating GaAs by Photothermal Radiometric Deep Level Transient Spectroscopy", Superficies Vacio 8, 13-17 (1999). - PDF
  43. Kinetics of Surface-State Laser Annealing in Si Frequency- Swept Infrared Photothermal Radiometry
    M. E. Rodriguez, J. A. Garcia, A. Mandelis, C. Jean and Y. Riopel, "Kinetics of Surface-State Laser Annealing in Si Frequency- Swept Infrared Photothermal Radiometry", Appl. Phys. Lett. 74, Number 17, 2429-2431, 26 April 1999. - PDF
  44. Detection of Silicon Wafer Contamination by Lifetime Measurement Using Infrared Photothermal Radiometry
    A. Salnick, A. Mandelis and C. Jean, "Detection of Silicon Wafer Contamination by Lifetime Measurement Using Infrared Photothermal Radiometry", Phys. Stat. Solidi (a) Rapid Research Note 163, No. 1, R5-R6, September 1997. - PDF
  45. Infrared Photothermal Radiometric Deep-Level Transient Spectroscopy of Shallow B+ Dopant States in p-Si
    A. Salnick, A. Mandelis and C. Jean, "Infrared Photothermal Radiometric Deep-Level Transient Spectroscopy of Shallow B+ Dopant States in p-Si", Appl. Phys. Lett. 71, No. 18, 2671-2673, November 1997. - PDF
  46. Monitoring of ion Implantation in Si with Carrier Plasma Waves Using Infrared Photothermal Radiometry
    A. Salnick, A. Mandelis, F. Funak and C. Jean, "Monitoring of ion Implantation in Si with Carrier Plasma Waves Using Infrared Photothermal Radiometry", Appl. Phys. Lett. 71, No. 11, 1531-1533, September 1997. - PDF
  47. Noncontact Carrier Lifetime Depth-Profiling of Ion-Implanted Si Using Photothermal Radiometry
    A. Othonos, A. Salnick, A. Mandelis and C. Christofides, "Noncontact Carrier Lifetime Depth-Profiling of Ion-Implanted Si Using Photothermal Radiometry", Phys. Stat. Solidi (a) Rapid Research Note 161, R13-R14, 1997. - PDF
  48. Noncontacting Photothermal Radiometry of SiO2/Si MOS Capacitor Structures
    A. Salnick, C. Jean and A. Mandelis, "Noncontacting Photothermal Radiometry of SiO2/Si MOS Capacitor Structures", Solid State Electron 41 (4), 591-597 (1997). - PDF
  49. Relative Sensitivity of Photomodulated Reflectance and Photothermal Infrared Radiometry to Thermal and Carrier Plasma Waves in Semiconductors
    A. Salnick, A. Mandelis, H. Ruda and C. Jean, "Relative Sensitivity of Photomodulated Reflectance and Photothermal Infrared Radiometry to Thermal and Carrier Plasma Waves in Semiconductors", J. Appl. Phys. 82, No. 4, 1853-1859, August 1997. - PDF
  50. Theoretical and Experimental Aspects of Three-Dimensional Infrared Photothermal Radiometry of Semiconductors
    T. Ikari, A. Salnick and A. Mandelis, "Theoretical and Experimental Aspects of Three-Dimensional Infrared Photothermal Radiometry of Semiconductors", J. Appl. Phys. 85, Number 10, 7392-7397, 15 May 1999. A. Salnick, A. Mandelis and C. Jean, "Infrared Photothermal Radiometric Deep-Level Transient Spectroscopy of Shallow B+ Dopant States in p-Si", Appl. Phys. Lett. 71, No. 18, 2671-2673, November 1997. - PDF
  51. Thermoelectronic-Wave Coupling in Laser Photothermal Theory of Semiconductors at Elevated Temperatures
    A. Mandelis, M. Nestoros and C. Christofides, "Thermoelectronic-Wave Coupling in Laser Photothermal Theory of Semiconductors at Elevated Temperatures", Opt. Eng. 36 (2), 459-468, February 1997. - PDF
  52. Non-Contact Measurement of Transport Properties of Long Bulk-Lifetime Si Wafers using Photothermal Radiometry
    A. Salnick, A. Mandelis and C. Jean, "Non-Contact Measurement of Transport Properties of Long Bulk-Lifetime Si Wafers using Photothermal Radiometry", Appl. Phys. Lett. 69 (17), 2522-2524 , October 21, 1996. - PDF
  53. Non-Contacting Measurements of Photocarrier Lifetimes in Bulk- and Polycrystalline Thin-Film Si Photoconductive Devices by Photothermal Radiometry
    A. Mandelis, A. Othonos, C. Christofides and J. Boussey-Said, "Non-Contacting Measurements of Photocarrier Lifetimes in Bulk- and Polycrystalline Thin-Film Si Photoconductive Devices by Photothermal Radiometry", J. Appl. Phys. 80 (9), 5332-5341, November 1, 1996. - PDF
  54. Photothermal Radiometric Investigation of Implanted Silicon: The Influence of Dose and Thermal Annealing
    A. Othonos, C. Christofides and A. Mandelis, "Photothermal Radiometric Investigation of Implanted Silicon: The Influence of Dose and Thermal Annealing", Appl. Phys. Lett. 69 (6), 821-823, August 5, 1996. - PDF
  55. Quantitative Photo-Thermo-Modulated Optical Reflectance Studies of Crystalline and Ion-Implanted Germanium
    A. Mandelis and R.E. Wagner, "Quantitative Photo-Thermo-Modulated Optical Reflectance Studies of Crystalline and Ion-Implanted Germanium", Jpn. J. Appl. Phys. 35, 1786-1797, March 1996. - PDF
  56. Two-Layer Model for Photomodulated Thermoreflectance of Semiconductor Wafers
    C. Christofides, F. Diakonos, A. Seas, C. Christou, M. Nestoros and A. Mandelis, "Two-Layer Model for Photomodulated Thermoreflectance of Semiconductor Wafers", J. Appl. Phys. 80, 1713-1723, August 1, 1996. - PDF
  57. Non-contact Photothermal Infrared Radiometric Deep-Level Transient Spectroscopy of GaAs Wafers
    A. Mandelis, R.A. Budiman, M. Vargas and D. Wolff, "Non-contact Photothermal Infrared Radiometric Deep-Level Transient Spectroscopy of GaAs Wafers", Appl. Phys. Lett. 67, 1582-1584, September 11, 1995. - PDF
  58. Highly Resolved Separation of Carrier and Thermal Wave Contributions to Photothermal Signals from Cr doped Silicon Using Rate Window Infrared Radiometry
    A. Mandelis, R. Bleiss and F. Shimura, "Highly Resolved Separation of Carrier and Thermal Wave Contributions to Photothermal Signals from Cr doped Silicon Using Rate Window Infrared Radiometry", J. Appl. Phys. 74, 3431-3434, Sept. 1993. - PDF
  59. A Generalized Calculation of the Temperature and Drude Photo Modulated Optical Reflectance Coefficients in Semiconductors
    R. Wagner and A. Mandelis, "A Generalized Calculation of the Temperature and Drude Photo Modulated Optical Reflectance Coefficients in Semiconductors", J. Phys. Chem. Solids 52, 1061 - 1070, 1991. - PDF
  60. Effects of Secondary Laser Illumination During the Transient Measurement in Optical and Electrical Deep Level Transient Spectroscopy (DLTS)
    Z.H. Chen and A. Mandelis, "Effects of Secondary Laser Illumination During the Transient Measurement in Optical and Electrical Deep Level Transient Spectroscopy (DLTS)", Appl. Phys. Lett. 59, 1861 - 1863, 1991. - PDF
  61. Infrared Real time normalized Photopyroelectric Measurements of Crystalline Germanium: Instrumentation and Spectroscopy
    C. Christofides, A. Mandelis, K. Ghandi and R.E. Wagner, "Infrared Real time normalized Photopyroelectric Measurements of Crystalline Germanium: Instrumentation and Spectroscopy", Rev. Sci. Instrum. 61, 2360 - 2367, September, 1990. - PDF
  62. Photothermal Reflectance Investigation of Processed Silicon. II: Signal Generation and Lattice Temperature Dependence in Ion Implanted and Amorphous Thin Layers
    I.A. Vitkin, C. Christofides and A. Mandelis, "Photothermal Reflectance Investigation of Processed Silicon. II: Signal Generation and Lattice Temperature Dependence in Ion Implanted and Amorphous Thin Layers", J. Appl. Phys. 67 (6), 2822 - 2830, March, 1990. - PDF
  63. Photothermal Reflectance Investigation of Processed Silicon. I: Room Temperature Study of the Induced Damage and of the Annealing Kinetics of Defects in Ion Implanted Wafers
    C. Christofides, I.A. Vitkin and A. Mandelis, "Photothermal Reflectance Investigation of Processed Silicon. I: Room Temperature Study of the Induced Damage and of the Annealing Kinetics of Defects in Ion Implanted Wafers", J. Appl. Phys. 67 (6), 2815 - 2821, March, 1990 - PDF
  64. Coupled AC Photocurrent and Photothermal Reflectance Response Theory of Semiconducting p n Junctions. I
    A. Mandelis, "Coupled AC Photocurrent and Photothermal Reflectance Response Theory of Semiconducting p n Junctions. I", J. Appl. Phys. 66 (11), 5572 - 5583, December, 1989. - PDF
  65. Laser Induced Photothermal Reflectance Investigation of Silicon Damaged by Arsenic Ion Implantation: A Temperature Study
    I.A. Vitkin, C. Christofides and A. Mandelis, "Laser Induced Photothermal Reflectance Investigation of Silicon Damaged by Arsenic Ion Implantation: A Temperature Study", Appl. Phys. Lett. 54 (24), 2392 - 2394, June, 1989. - PDF
  66. Combined AC Photocurrent and Photothermal Reflectance Measurements in Semiconducting p n Junctions. II.
    A. Mandelis, A.A. Ward and K.T. Lee, "Combined AC Photocurrent and Photothermal Reflectance Measurements in Semiconducting p n Junctions. II.", J. Appl. Phys. 66 (11), 5584 - 5593, December, 1989. - PDF
  67. High Frequency Differential Piezoelectric Photoacoustic Investigation of Ion Implanted (100) Silicon Wafers via Laser Beam Position Modulation
    J. Zuccon and A. Mandelis, "High Frequency Differential Piezoelectric Photoacoustic Investigation of Ion Implanted (100) Silicon Wafers via Laser Beam Position Modulation", IEEE Trans. Ultrasonics, Ferroelectrics, and Frequency Control, UFFC 35, 5 - 13, January, 1988. - PDF
  68. Photothermal Wave Imaging of MOS Field Effect Transistor (MOSFET) Structures
    A. Mandelis, A. Williams and E.K.M. Siu, "Photothermal Wave Imaging of MOS Field Effect Transistor (MOSFET) Structures", J. Appl. Phys. 63, (1), 92 - 98, January, 1988. - PDF
  69. Photopyroelectric Spectroscopy (P2ES) of Electronic Defect Centers in Crystalline n CdS
    A. Mandelis, W. Lo and R. Wagner, "Photopyroelectric Spectroscopy (P2ES) of Electronic Defect Centers in Crystalline n CdS", Appl. Phys. A44, 123 - 130, October, 1987. - PDF
  70. Studies of Defect Structure Effects on the Transport Properties of Pure Crystalline n-CdS via the Temperature Dependence of Photoacoustic and Photocurrent Spectra
    T. Dioszeghy and A. Mandelis, "Studies of Defect Structure Effects on the Transport Properties of Pure Crystalline n-CdS via the Temperature Dependence of Photoacoustic and Photocurrent Spectra", Int. J. Phys. Chem. Solids 47, 1115 - 1128, December, 1986. - PDF
  71. A Variational Green’s Function Approach to Theoretical Treatment and Applications of the Capacitance of Three Dimensional Geometries
    A. Mandelis, "A Variational Green's Function Approach to Theoretical Treatment and Applications of the Capacitance of Three Dimensional Geometries", Can. J. Phys. 60, 179 - 195, February, 1982. - PDF